Eagle® PECVD/PEALD Reactor

The Eagle family of single wafer PECVD and PEALD reactors has demonstrated superior production performance. The Eagle solutions feature high productivity and up-time, stable uniformity, small footprint, simple mechanism and low CoO. Eagle reactors are designed for optimum deposition of the Aurora® series of low-k dielectric films for copper damascene processes, and the next generation oxide and nitride PEALD films.

Wide process window:
Dual frequency system with high speed matching enables a wide process window and material tunability

Process Stability:
Unique design of wide gap & large susceptor in electrode can form low - density plasma field and temperature uniformity, even for thin layers using low RF plasma power.

Particle free:
The simple system design and properly controlled reactor temperature provide both low particle and stable film conditions.
Major Applications:
• Low-k Dielectrics: "Aurora Low-k", "Aurora ULK", "Aurora ELK"
• PEALD Oxide, Nitride and Carbon: Gate Protection (Spacers, Liners, ESL, etc.)
• PEALD LowTemp-Oxide and Nitride: Advanced Lithography Enhancement (SDDP/SDQP)